Measurement of MOSFET channel potential profile
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (12) , 2368-2372
- https://doi.org/10.1109/16.8816
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Measurement and numerical modeling of short-channel MOSFET gate capacitancesIEEE Transactions on Electron Devices, 1987
- Measurement of intrinsic capacitance of lightly doped drain (LDD) MOSFET'sIEEE Transactions on Electron Devices, 1985
- Two-dimensional analytical modeling of threshold voltages of short-channel MOSFET'sIEEE Electron Device Letters, 1984
- Finite-Element Analysis of Semiconductor Devices: The FIELDAY ProgramIBM Journal of Research and Development, 1981