Removal of Electrically Active Defects in Silicon by 340 MeV Xe ion Bombardment
- 16 January 1995
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 147 (1) , K1-K3
- https://doi.org/10.1002/pssa.2211470130
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As+ Ion ImplantationJapanese Journal of Applied Physics, 1981