Properties of (Ge2)x(GaAs)1−x alloys grown by molecular beam epitaxy
- 1 March 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (5) , 494-496
- https://doi.org/10.1063/1.95569
Abstract
Single‐crystalline (Ge2)x(GaAs)1−x alloys have been grown by molecular beam epitaxy on GaAs (100) substrates at substrate temperatures of 550 and 430 °C. The structure of these alloys has been studied using transmission electron microscopy. We observe that growths done at 550 °C show a compositional phase separation, within a structurally single‐crystalline lattice, into Ge‐rich and GaAs‐rich domains whose sizes are of the order of 100 Å. Growths at 430 °C appear to be both single phase and single crystalline. Room‐temperature Hall measurements on the single‐phase alloys show them to be n type.Keywords
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