Electron-Cyclotron-Resonance Sputtered SrTiO3 Thin Films
- 1 September 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (9S) , 4963-4966
- https://doi.org/10.1143/jjap.35.4963
Abstract
SrTiO3 thin films deposited by electron-cyclotron-resonance (ECR) plasma sputtering at 400° C are investigated from the viewpoint of leakage current and dielectric breakdown strength. 100-nm-thick SrTiO3 samples with 400° C deposition followed by 400° C oxygen annealing show low leakage current density (on the order of 10-9 A/cm2 at 5 V) and high dielectric breakdown strength (>4 MV/cm). SrTiO3 thin films deposited by ECR sputtering at 400° C are promised for capacitor dielectrics of future 1-giga-bit dynamic-random-access memories.Keywords
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