Tunnel transfer of electrons, holes and excitons in biased heterostructures
- 31 December 1990
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 8 (1) , 7-12
- https://doi.org/10.1016/0749-6036(90)90266-a
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Charge accumulation in a double-barrier resonant-tunneling structure studied by photoluminescence and photoluminescence-excitation spectroscopyPhysical Review Letters, 1990
- Electronic processes in double barrier resonant tunneling structures investigated by optical spectroscopySurface Science, 1990
- Nonresonant electron and hole tunneling times in GaAs/Al0.35Ga0.65As asymmetric double quantum wellsApplied Physics Letters, 1990
- Vertical transport of electrons and holes in short period GaAsAlGaAs superlatticesSuperlattices and Microstructures, 1989
- Optical detection of vertical transport in short-period GaAs/AlGaAs superlatticesSuperlattices and Microstructures, 1989
- Resonantly enhanced electron tunneling rates in quantum wellsPhysical Review Letters, 1989
- Resonant and non-resonant tunneling in multi quantum well structuresSuperlattices and Microstructures, 1989
- Photoinduced Space-Charge Buildup by Asymmetric Electron and Hole Tunneling in Coupled Quantum WellsPhysical Review Letters, 1988
- Equivalence between resonant tunneling and sequential tunneling in double-barrier diodesApplied Physics Letters, 1987
- Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applicationsIEEE Journal of Quantum Electronics, 1986