Tunneling-enhanced recombination in Cu(In, Ga)Se2 heterojunction solar cells

This letter presents an analytical model for tunneling-enhanced recombination current in the space charge region of semiconductor junctions. We investigate current–voltage characteristics of different types of ${\mathrm{Cu(In, Ga)Se}}_{\mathrm{2}}$ -based heterojunction solar cells in a temperature range from 100 to 340 K. The temperature dependence of the saturation current and of the diode ideality factor of these devices are well described by the closed form expressions derived by the present approach.