Planar ordering of InP quantum dots on (1 0 0)In0.48Ga0.52P
- 23 June 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 216 (1-4) , 26-32
- https://doi.org/10.1016/s0022-0248(00)00422-x
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998
- Ordering of self-assembledislands studied by grazing incidence small-angle x-ray scattering and atomic force microscopyPhysical Review B, 1998
- Time-resolved luminescence of InP quantum dots in amatrix: Carrier injection from the matrixPhysical Review B, 1998
- Spontaneous Ordering of Arrays of Coherent Strained IslandsPhysical Review Letters, 1995
- Nanoscale InP islands embedded in InGaPApplied Physics Letters, 1995
- Study of the two-dimensional–three-dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum-sized structuresApplied Physics Letters, 1994
- Formation of coherently strained self-assembled InP quantum islands on InGaP/GaAs(001)Journal of Crystal Growth, 1994
- Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1993
- Band lineups and deformation potentials in the model-solid theoryPhysical Review B, 1989
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982