SOI structures by selective epitaxial lateral overgrowth
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 5, 16
- https://doi.org/10.1109/soi.1988.95392
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Trench-isolated transistors in lateral CVD epitaxial silicon-on-insulator filmsIEEE Electron Device Letters, 1984
- Control of lateral epitaxial chemical vapor deposition of silicon over insulatorsJournal of Applied Physics, 1984
- Growth of Electronic Quality Silicon Over SiO2 by Epitaxial Lateral Overgrowth TechniqueJournal of the Electrochemical Society, 1982