Ultra-Dry Oxidation for Improving the Time-Dependent Dielectric Breakdown Lifetime of Ultra-Thin Silicon Oxide Films
- 1 June 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (6B) , L747-749
- https://doi.org/10.1143/jjap.31.l747
Abstract
Time-dependent dielectric breakdown lifetime of 5-nm-thick silicon oxide films oxidized in an ultra-dry oxygen gas of less than 1-ppm moisture concentration was investigated. The lifetime for the ultra-dry films was larger than that for the conventional films oxidized in more than 100-ppm humidity. In particular, a pronounced improvement can be confirmed in the case when a silicon substrate is an anode. Since stress-induced positive charges, which affect the lifetime, are mainly generated near the anode-side oxide interfaces, the oxide-silicon interface conditions are probably improved by the ultra-dry oxidation.Keywords
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