Adjustable confinement of the electron gas in dual-gate silicon-on-insulator mosfet's
- 31 December 1990
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 8 (1) , 131-135
- https://doi.org/10.1016/0749-6036(90)90290-n
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A fully depleted lean-channel transistor (DELTA)-a novel vertical ultrathin SOI MOSFETIEEE Electron Device Letters, 1990
- Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performanceIEEE Electron Device Letters, 1987
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972