Long term stability of gate-oxides on n- and p-type silicon carbide studied by charge injection techniques
- 30 April 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 46 (1-3) , 263-266
- https://doi.org/10.1016/s0921-5107(96)01987-3
Abstract
No abstract availableKeywords
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