PHOSPHOROUS-ION-IMPLANTED CdS
- 15 May 1968
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 12 (10) , 334-336
- https://doi.org/10.1063/1.1651841
Abstract
High energy phosphorous ions implanted into CdS have given evidence of conductivity type conversion after careful post‐annealing. Thermal probe measurements consistently showed p‐type conductivity on the implanted surface. Diodes fabricated from implanted material show good rectification characteristics, low voltage electroluminescence, and double‐injection phenomena at room temperature.Keywords
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