Pixel noise suppression via SoC management of tapered reset in a 1920/spl times/1080 CMOS image sensor
- 5 December 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 40 (12) , 2766-2776
- https://doi.org/10.1109/jssc.2005.858480
Abstract
Correlated double sampling is widely used in imaging arrays to eliminate noise generated when a CCD's sense capacitance or a CMOS sensor's photodiode is reset after signal integration and readout. Instead, we suppress photodiode kTC noise using a SoC implementation for progressive reset; supporting SoC components include a feedback amplifier having elements distributed amongst the pixel and column buffer, a tapered reset clock waveform, and reset timing generator. The reset method does not swell pixel area, compel processing of the correlated reset and signal values, or require additional memory. Theoretical analysis is presented along with experimental results. Integrated in a 1920 by 1080 imager having 5 /spl mu/m by 5 /spl mu/m pixels in 0.25-/spl mu/m CMOS, measured random noise for 5.5-fF detector capacitance is /spl sim/8 e- to 225 MHz video rate with image lag <0.12%. Random noise of /spl sim/30 e- is otherwise predicted and achieved using conventional reset. Sensor S/N ratio with progressive readout is /spl ges/52 dB at 60 Hz and 72 Hz frame rate.Keywords
This publication has 12 references indexed in Scilit:
- Development Status of CMOS 1920 × 1080 Imaging System-on-Chip for 60p and 72p HDTVSMPTE Motion Imaging Journal, 2004
- Performance limits in visible and infrared imager sensorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Experimental Ultrahigh-Definition Color Camera System with Three 8M-pixel CCDsSMPTE Journal, 2002
- Low-noise readout using active reset for CMOS APSPublished by SPIE-Intl Soc Optical Eng ,2000
- CMOS active pixel image sensors for highly integrated imaging systemsIEEE Journal of Solid-State Circuits, 1997
- 10 x 132 CMOS/CCD readout with 25 μm pitch and on-chip signal processing including CDS and TDIPublished by SPIE-Intl Soc Optical Eng ,1992
- Analysis of low signal level characteristics for high-sensitivity CCD charge detectorIEEE Transactions on Electron Devices, 1992
- CCM-a new low-noise charge carrier multiplier suitable for detection of charge in small pixel CCD image sensorsIEEE Transactions on Electron Devices, 1992
- Demonstration of an algorithm for read-noise reduction in infrared arraysThe Astrophysical Journal, 1990
- A new noise suppression method for high-definition CCD camerasIEEE Transactions on Consumer Electronics, 1989