Characterization of Depletion-Type Surface Tunnel Transistors
- 1 December 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (12B) , L1727
- https://doi.org/10.1143/jjap.31.l1727
Abstract
A depletion-type Surface Tunnel Transistor (D-STT) is proposed to increase the tunneling current compared to that of the enhancement-type STT (E-STT) previously reported. The most important feature of the D-STT is the use of a modulation doped structure in order to accumulate a high concentration of electrons under the gate. GaAs/AlGaAs D-STTs, which are fabricated by using an MBE regrowth technique, exhibit depletion-mode transistor action with a larger operation current than that displayed by the E-STT. This increase in current is due to a higher two-dimensional electron gas concentration at the i-GaAs surface. Moreover, the high gate leakage current which limits GaAs E-STT operation is reduced in the case of the D-STT by a factor of 106.Keywords
This publication has 4 references indexed in Scilit:
- Proposal for Surface Tunnel TransistorsJapanese Journal of Applied Physics, 1992
- Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logicIEEE Transactions on Electron Devices, 1989
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- The prediction of tunnel diode voltage-current characteristicsSolid-State Electronics, 1970