Proposal for Surface Tunnel Transistors
- 1 April 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (4B) , L455
- https://doi.org/10.1143/jjap.31.l455
Abstract
A new three-terminal tunnel device, the surface tunnel transistor (STT), is proposed and its operation is demonstrated using GaAs/AlGaAs. STT consists of n+/i/p+ diode structure with an insulated gate in the i-region, which is similar to a MOSFET. However, the source and drain are oppositely doped. The most important feature of this device is that the drain must be so highly degenerated that a tunnel junction is formed with a two-dimensional (2D) electron channel under the gate. The tunneling current from source to drain is controlled by the gate bias through the concentration of accumulated 2D electrons under the gate. GaAs STTs with i-Al0.6Ga0.4As as a gate insulator are fabricated using MBE regrowth techniques on a mesa structure. This device exhibits transistor characteristics at 77 K and at room temperature, which confirms the new operation principle of STTs.Keywords
This publication has 8 references indexed in Scilit:
- A new three-terminal tunnel deviceIEEE Electron Device Letters, 1987
- Quantum-well resonant tunneling bipolar transistor operating at room temperatureIEEE Electron Device Letters, 1986
- Damage and contamination-free GaAs and AlGaAs etching using a novel ultrahigh-vacuum reactive ion beam etching system with etched surface monitoring and cleaning methodJournal of Vacuum Science & Technology A, 1986
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)Japanese Journal of Applied Physics, 1985
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Physical limits in digital electronicsProceedings of the IEEE, 1975
- The prediction of tunnel diode voltage-current characteristicsSolid-State Electronics, 1970
- New Phenomenon in Narrow GermaniumJunctionsPhysical Review B, 1958