Long-wavelength optical phonons in ternary nitride-based crystals
- 15 December 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 58 (23) , 15283-15287
- https://doi.org/10.1103/physrevb.58.15283
Abstract
Phonon modes in column-III–nitride ternary semiconductors are investigated theoretically within the modified random-element isodisplacement model. It is found that and branches of optical phonons in wurtzite and exhibit one-mode behavior. This result is explained by the fact that atomic mass of nitrogen is much smaller than those of other atoms.
Keywords
This publication has 17 references indexed in Scilit:
- Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxyApplied Physics Letters, 1997
- Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systemsJournal of Applied Physics, 1997
- InGaN Laser Diode Grown on 6H–SiC Substrate Using Low-Pressure Metal Organic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Electron–optical-phonon scattering in wurtzite crystalsPhysical Review B, 1997
- The Blue Laser DiodePublished by Springer Nature ,1997
- Electron-optical-phonon interaction in binary/ternary heterostructuresJournal of Applied Physics, 1990
- Model for Long ‐ Wavelength Optical‐Phonon Modes of Mixed CrystalsPhysica Status Solidi (b), 1974
- Long wavelength optical phonons in mixed crystalsAdvances in Physics, 1971
- Optical Phonons in Mixed Crystals ofPhysical Review B, 1967
- Dynamical Theory of Crystal LatticesAmerican Journal of Physics, 1955