Molecular beam epitaxy growth interrupt and temperature studies on doped and undoped single quantum well pseudomorphic structures
- 27 July 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (4) , 432-434
- https://doi.org/10.1063/1.107905
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Photoluminescence study of undoped and modulation-doped pseudomorphic As/AS/As single quantum wellsPhysical Review B, 1989
- Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wellsApplied Physics Letters, 1986
- Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothingSurface Science, 1986
- Electron mobilities in modulation-doped GaAs-(AlGa)As heterostructuresSurface Science, 1983