Mechanism for thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy: Role of nonradiative defects
- 22 December 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (25) , 3676-3678
- https://doi.org/10.1063/1.120478
Abstract
No abstract availableKeywords
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