Enhancement of high-temperature photoluminescence in strained Si1−xGex/Si heterostructures by surface passivation
- 26 December 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (26) , 3344-3346
- https://doi.org/10.1063/1.112386
Abstract
The photoluminescence from strained Si1−xGex alloy quantum wells on Si(100) has been measured from 6 to 300 K. It is shown that the high‐temperature photoluminescence of Si1−xGex quantum wells can be increased by over an order of magnitude by passivation of the top silicon surface. Through experiments and a model, it is clearly demonstrated that the decay of the Si1−xGex photoluminescence at high temperature is controlled by surface recombination, not by an intrinsic property of Si1−xGex. By applying proper conditions, nearly constant Si1−xGex photoluminescence can be achieved from 77 to 250 K.Keywords
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