Room-temperature 1.3 μm electroluminescence from strained Si1−xGex/Si quantum wells
- 22 June 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (25) , 3177-3179
- https://doi.org/10.1063/1.106734
Abstract
We report the first room‐temperature 1.3 μm electroluminescence from strained Si1−xGex/Si quantum wells. The electroluminescence is due to band‐edge carrier recombination, and its intensity increases linearly with the forward current up to 1700 A/cm2. The internal quantum efficiency is estimated to have a lower limit of 2×10−4. As the temperature is increased from 77 to 300 K, luminescence from the silicon increases relative to that from the Si1−xGex wells. A minimum band offset is required to have effective room‐temperature luminescence from the Si1−xGex quantum wells.Keywords
This publication has 17 references indexed in Scilit:
- Electroluminescence and photoluminescence from Si1−xGex alloysApplied Physics Letters, 1991
- Direct transition energies in strained ten-monolayer Ge/Si superlatticesPhysical Review Letters, 1990
- Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGex alloysApplied Physics Letters, 1990
- Optical waveguiding in a single-crystal layer of germanium silicon grown on siliconOptics Letters, 1990
- Photoluminescence in short-period Si/Ge strained-layer superlatticesPhysical Review Letters, 1990
- Observation of Direct Band Gap Properties in GenSim Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1989
- Electronic properties of the (100) (Si)/(Ge) strained-layer superlatticesPhysical Review B, 1988
- Avalanche gain in GexSi1-x/Si infrared waveguide detectorsIEEE Electron Device Letters, 1986
- GexSi1−x strained-layer superlattice waveguide photodetectors operating near 1.3 μmApplied Physics Letters, 1986
- Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structureApplied Physics A, 1974