Luminescence origins in molecular beam epitaxial Si1−xGex
- 10 August 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (6) , 690-692
- https://doi.org/10.1063/1.107823
Abstract
Interstitial‐type features smaller than ∼1.5 nm and in areal densities up to 7×108 cm−2 have been identified as the origin of a broad photoluminescence (PL) band from thick, fully strained layers of Si1−xGex alloys grown by molecular beam epitaxy. The strong PL band was predominant when the alloy layer thickness was greater than 4–10 nm, depending on x and the growth temperature. Thinner alloy layers exhibited phonon‐resolved transitions originating from shallow dopant bound excitons, similar to bulk material but shifted in energy due to strain and hole quantum confinement.Keywords
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