Direct observation of band-edge luminescence and alloy luminescence from ultrametastable silicon-germanium alloy layers
- 6 April 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (14) , 1729-1731
- https://doi.org/10.1063/1.107199
Abstract
Ultrametastable silicon‐germanium (Si1−xGex) layers with a Ge content x in the range from about 20% to 27% were grown by Si‐MBE at temperatures far below 550 °C (325–450 °C). The thicknesses of the layers (up to 500 nm) exceed the equilibrium thickness by a factor of up to 50. We observe in the as‐grown samples without any annealing both the excitonic Si1−xGex band‐edge luminescence and a broad alloy luminescence of unknown origin. The two peaks have an energy difference of ≊144 meV and shift linearly with the Ge content. The alloy band luminescence disappears when strain relaxation sets on upon annealing at around 600 °C.Keywords
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