Effect of low-temperature photoconduction on the depletion width in GaAs-AlGaAs wire
- 1 June 1990
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (6) , 634-637
- https://doi.org/10.1088/0268-1242/5/6/033
Abstract
The authors have studied the temperature dependence of side wall depletion in shallow mesa-etched GaAs-AlGaAs wires with and without illumination in the temperature range from 4.2 to 300 K. In the dark, the edge depletion width monotonically increases as the temperature is decreased, whereas under illumination it is reduced at low temperature where persistent photoconduction occurs and the electron density increases in the channel.Keywords
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