Noise Measurements in GaAs Avalanche Photodiodes
- 1 October 1970
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 9 (10) , 1286-1287
- https://doi.org/10.1143/jjap.9.1286
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Noise Characteristics in Silicon PhotodiodesJapanese Journal of Applied Physics, 1969
- GaAs SCHOTTKY BARRIER AVALANCHE PHOTODIODESApplied Physics Letters, 1969
- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaPApplied Physics Letters, 1966
- Multiplication noise in uniform avalanche diodesIEEE Transactions on Electron Devices, 1966