GaAs SCHOTTKY BARRIER AVALANCHE PHOTODIODES
- 15 March 1969
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (6) , 197-199
- https://doi.org/10.1063/1.1652772
Abstract
Uniform avalanche Schottky barrier photodiodes have been fabricated by plating a thin layer of platinum on GaAs and forming a guard ring by proton radiation. Operating at a gain of 100 these photodiodes exhibit gain-bandwidth products greater than 50 GHz and enhanced signal to noise ratio in excess of 30 dB. The observed variation on the spectral response with bias can be accounted for by a change in the absorption of the Schottky barrier diode.Keywords
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