Statistics for the transient response of single-mode semiconductor laser gain switching
- 1 January 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review A
- Vol. 43 (1) , 498-506
- https://doi.org/10.1103/physreva.43.498
Abstract
For a gain-switched semiconductor laser we study the statistics of the time at which the laser intensity first reaches a threshold level and also the laser intensity fluctuations in the nonlinear regime. The dispersion in the maximum value of the laser intensity at the first peak of the relaxation oscillations is calculated. A simple relation between this maximum value and the passage time for each individual switch-on event is found.Keywords
This publication has 24 references indexed in Scilit:
- Dynamics of sweeping through an instability: Passage-time statistics for colored noisePhysical Review A, 1989
- Analysis of transients in pulse modulated semiconductor lasers biased near thresholdApplied Physics Letters, 1989
- Passage time statistics in semiconductor laser turn onPhysical Review A, 1988
- Stochastic-dynamics characterization of delayed laser threshold instability with swept control parameterPhysical Review A, 1988
- Measurements of first-passage-time distributions in laser transients near thresholdJournal of the Optical Society of America B, 1988
- Observation of the ‘‘Brownian motion’’ of the electric field in a laserPhysical Review A, 1987
- Statistical fluctuations in laser transientsPhysical Review A, 1986
- Theory for the Transient Statistics of a Dye LaserPhysical Review Letters, 1986
- Influence of white noise on delayed bifurcationsPhysical Review A, 1986
- Quantum Fluctuations, Pump Noise, and the Growth of Laser RadiationPhysical Review Letters, 1985