Metal-organic vapour-phase epitaxial growth of symmetrically strained (GaIn)As/Ga(PAs) superlattices
- 20 November 1993
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 21 (2-3) , 249-252
- https://doi.org/10.1016/0921-5107(93)90359-u
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Growth of strain-balanced InAsP/InGaP superlattices for 1.06 μm optical modulatorsApplied Physics Letters, 1993
- Pseudomorphic InGaAs-GaAsP quantum well modulators on GaAsApplied Physics Letters, 1992
- Monolayer resolution by means of x-ray interference in semiconductor heterostructuresJournal of Applied Physics, 1990
- Absorption spectroscopy on As/As multi-quantum-well heterostructures. I. Excitonic transitionsPhysical Review B, 1987
- The dynamic theory of X-ray diffraction by the one-dimensional ideal superlattice. I. Diffraction by the arbitrary superlatticeActa Crystallographica Section A Foundations of Crystallography, 1985
- Excitonic Absorption Spectra of GaAs–AlAs Superlattice at High TemperatureJapanese Journal of Applied Physics, 1984
- On the theory of X-ray diffraction in a perfect crystal with distorted surface layerPhysica Status Solidi (a), 1983
- Emergence of a periodic mode in the so-called turbulent region in a circular Couette flowJournal de Physique Lettres, 1982
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975
- Interband Optical Transitions in Extremely Anisotropic Semiconductors. I. Bound and Unbound Exciton AbsorptionJournal of the Physics Society Japan, 1966