Ion microbeam probing of sense amplifiers to analyze single event upsets in a CMOS DRAM
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 26 (2) , 132-134
- https://doi.org/10.1109/4.68127
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A new failure mode of radiation-induced soft errors in dynamic memoriesIEEE Electron Device Letters, 1988
- A 20-ns 128-kbit*4 high speed DRAM with 330-Mbit/s data rateIEEE Journal of Solid-State Circuits, 1988
- Alpha-particle-induced charge collection measurements and the effectiveness of a novel p-well protection barrier on VLSI memoriesIEEE Transactions on Electron Devices, 1985
- Alpha-particle-induced soft error rate in VLSI circuitsIEEE Transactions on Electron Devices, 1982
- Charge Funneling in N- and P-Type Si SubstratesIEEE Transactions on Nuclear Science, 1982