Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s
- 7 May 2009
- journal article
- research article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 45 (10) , 501-503
- https://doi.org/10.1049/el.2009.0552
Abstract
Oxide-confined 850 nm vertical-cavity surface-emitting lasers operating at 40 Gbit/s at current densities ∼10 kA/cm2 are realised. The deconvoluted rise time of the device is below 10 ps and remains hardly temperature sensitive up to 100°C.Keywords
This publication has 4 references indexed in Scilit:
- 120°C 20 Gbit/s operation of 980 nm VCSELElectronics Letters, 2008
- Large aperture 850 nm VCSELs operating at bit rates up to 25 Gbit/sElectronics Letters, 2008
- High-Speed Quantum-Dot Vertical-Cavity Surface-Emitting LasersProceedings of the IEEE, 2007
- High-efficiency, high-speed VCSELs with 35 Gbit/s error-free operationElectronics Letters, 2007