Ultralow loss single layer submicron silicon waveguide crossing for SOI optical interconnect
Top Cited Papers
- 20 November 2013
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 21 (24) , 29374-29382
- https://doi.org/10.1364/oe.21.029374
Abstract
We demonstrate compact, broadband, ultralow loss silicon waveguide crossings operating at 1550 nm and 1310 nm. Cross-wafer measurement of 30 dies shows transmission insertion loss of − 0.028 ± 0.009 dB for the 1550 nm device and − 0.017 ± 0.005 dB for the 1310 nm device. Both crossings show crosstalk lower than − 37 dB. The devices were fabricated in a CMOS-compatible process using 248 nm optical lithography with a single etch step.Keywords
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