Structural stability and selectivity of thin epitaxial semiconductors
- 29 September 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (13) , 782-784
- https://doi.org/10.1063/1.97634
Abstract
It is shown how the availability of structural degrees of freedom in various ternary AnB4−nC4 adamantine semiconductors can lead to their energetic stabilization when grown epitaxially, and how the substrate strain can preferentially stabilize one structure over another even when the two are equally stable (or unstable) in bulk form.Keywords
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