Reorientation of the B-H complex in silicon by anelastic relaxation experiments

The elastic energy loss between 60 and 300 K was measured in ${\mathrm{SiB}}_{\mathit{x}}$ ${\mathrm{H}}_{\mathit{y}}$ at frequencies between 2.4 and 32 kHz. A single-time relaxation process appears in the neighborhood of 130 K, which is due to the stress-induced jumps of H around B, with a relaxation time τ=[(8±4)×${10}^{\mathrm{-}14}$ s]×exp[(0.22 ±0.01 eV)/kT]. The elastic interactions among the B-H complexes do not appear to affect the H jumps within the experimental error, and an upper limit of less than 10 meV is set for the random shifts of the H site energies due to such interactions.