Lifetime of thin oxide and oxide-nitride-oxide dielectrics within trench capacitors for DRAMs
- 1 May 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (5) , 913-919
- https://doi.org/10.1109/16.299673
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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