Quenching and enhancement of photoconductivity in semi-insulating GaAs
- 31 May 1990
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 74 (8) , 847-850
- https://doi.org/10.1016/0038-1098(90)90948-b
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Bleaching and recovery characteristics of optical absorption bands in semi-insulating GaAs crystalsJournal of Applied Physics, 1988
- Extrinsic photoconductive characteristics of semi-insulating GaAs crystalsJournal of Applied Physics, 1987
- Optically induced long-lifetime photoconductivity in semi-insulating bulk GaAsPhysical Review B, 1987
- Optically enhanced defect reactions in semi-insulating bulk GaAsJournal of Applied Physics, 1985
- A new slow-relaxation phenomenon in semi-insulating GaAsJournal of Applied Physics, 1985
- Metastable state of EL2 in thealloy systemPhysical Review B, 1984
- Thermal quenching of the 1–1.35 eV extrinsic photoconductivity in semi-insulating GaAs (Cr, O)Solid State Communications, 1984
- Persistent photoluminescence quenching of 0.68-eV emission in undoped semi-insulating GaAsApplied Physics Letters, 1984
- Photoelectric memory effect in GaAsJournal of Applied Physics, 1982
- Photoelectronic properties of high-resistivity GaAs : OJournal of Applied Physics, 1976