Molecular beam epitaxial grown Si1 − xCx layers on Si(001) as a substrate for MWCVD of diamond
- 2 December 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 157 (1-4) , 426-430
- https://doi.org/10.1016/0022-0248(95)00360-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Optical transitions in strained Si1−yCy layers on Si(001)Applied Physics Letters, 1994
- Growth and characterization of strain compensated Si1−x−y epitaxial layersMaterials Letters, 1993
- Epitaxial diamond thin films on (001) silicon substratesApplied Physics Letters, 1993
- Elastic recoil detection analysis with atomic depth resolutionNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Highly oriented, textured diamond films on silicon via bias-enhanced nucleation and textured growthJournal of Materials Research, 1993
- Chemical vapour deposition and characterization of smooth {100}-faceted diamond filmsDiamond and Related Materials, 1993
- Synthesis of Si1−yCy alloys by molecular beam epitaxyApplied Physics Letters, 1992