CoSi2Precipitate Coarsening During Formation of Buried Epitaxial Cosi2Layers By Ion Beam Synthesis
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The coarsening of CoSi2precipitates and the microstructural evolution of (111) Si implanted with 200 keV Co+ions at 350°C and fluences of 1×1016cm−2and 6×1016cm−2were investigated as a function of depth, annealing temperature and annealing time using Rutherford Backscattering Spectroscopy (RBS) and Transmission Electron Microscopy (TEM). After annealing cross-section TEM micrographs show a layered array of platelet-shaped precipitates with preferred facets on {111} planes. The fraction of Co-atoms, that were redistributed during the different annealing temperatures and times, has been used to determine an activation energy for the precipitate coarsening. By applying the Meechan-Brinkman and the change-of-slope methods, we obtained activation energies in the range of 3.2 – 3.6 eV.Keywords
This publication has 9 references indexed in Scilit:
- Ion beam synthesis of heteroepitaxial Si/CoSi2/Si structuresJournal of Applied Physics, 1990
- Epitaxy of metal silicidesThin Solid Films, 1990
- Formation of buried CoSi2 by ion implantationApplied Surface Science, 1989
- NUTRITION EFFECTS ON T-2 TOXIN TOXICITYJSM Mycotoxins, 1988
- Mesotaxy: Single-crystal growth of buried CoSi2 layersApplied Physics Letters, 1987
- The kinetics of precipitation from supersaturated solid solutionsJournal of Physics and Chemistry of Solids, 1961
- Electrical Resistivity Study of Lattice Defects Introduced in Copper by 1.25-Mev Electron Irradiation at 80°KPhysical Review B, 1956
- Isothermal Annealing Effects in Irradiated CopperPhysical Review B, 1953
- Über die vermeintliche Isomerie des roten und gelben Quecksilberoxyds und die Oberflächenspannung fester KörperZeitschrift für Physikalische Chemie, 1900