High-power surface emitting semiconductor laser with extended vertical compound cavity
- 20 March 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (6) , 523-525
- https://doi.org/10.1049/el:20030300
Abstract
Novel, electrically pumped, vertical compound cavity InGaAs lasers emitting at 980 nm are described. These have generated 1 W continuous-wave multimode and 0.5 W continuous-wave in a fundamental TEM00 mode and single frequency, with 90% coupling efficiency into a singlemode fibre.Keywords
This publication has 2 references indexed in Scilit:
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