Growth of (103) fiber-textured SrBi2Nb2O9 films on Pt-coated silicon

(103) fiber-textured ${\mathrm{SrBi}}_2{\mathrm{Nb}}_2{\mathrm{O}}_9$ thin films have been grown on Pt-coated Si substrates using a ${\mathrm{SrRuO}}_3$ buffer layer. High-resolution transmission electron microscopy reveals that the fiber texture arises from the local epitaxial growth of (111) ${\mathrm{SrRuO}}_3$ grains on (111) Pt grains and in turn (103) ${\mathrm{SrBi}}_2{\mathrm{Nb}}_2{\mathrm{O}}_9$ grains on (111) ${\mathrm{SrRuO}}_3$ grains. The films exhibit remanent polarization values of 9 $\mu {\mathrm{C/cm}}^2.$ The uniform grain orientation (fiber texture) should minimize grain-to-grain variations in the remanent polarization, which is important to continued scaling of ferroelectric memory device structures.