Simultaneous Observation of RHEED Oscillation during GaAs MBE Growth with Modulated Electron Beam
- 1 June 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (6R)
- https://doi.org/10.1143/jjap.25.847
Abstract
RHEED oscillations are simultaneously observed in different locations on growing GaAs by scanning the growth surface with an incident electron beam. The lateral growth-rate profiles obtained by in-situ measurements using modulated electron-beam scanning agree well with those of layer-thickness measurements made after growth. The time needed to complete the growth of the 1st monolayer distinctly differs from that of the succeeding monolayers, while the growth duration is almost constant for each succeeding monolayer. The time required for the 1st monolayer growth depends on the location on the growth surface, as well as on such growth parameters as the arsenic flux and substrate temperature.Keywords
This publication has 8 references indexed in Scilit:
- Surface Stoichiometry and Morphology of MBE Grown (001)GaAs through the Analysis of RHEED OscillationsJapanese Journal of Applied Physics, 1985
- The dependence of RHEED oscillations on MBE growth parametersJournal of Vacuum Science & Technology B, 1985
- Raman scattering from GaAsAlAs monolayer-controlled superlatticesSolid State Communications, 1985
- Phase-Locked Epitaxy Using RHEED Intensity OscillationJapanese Journal of Applied Physics, 1984
- Mono- and Bi-Layer Superlattices of GaAs and AlAsJapanese Journal of Applied Physics, 1984
- RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)Journal of Vacuum Science & Technology B, 1984
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975