Frequency-resolved capacitance spectroscopy-a new approach to measuring deep levels in semiconductors
- 1 November 1988
- journal article
- Published by IOP Publishing in Journal of Physics E: Scientific Instruments
- Vol. 21 (11) , 1022-1024
- https://doi.org/10.1088/0022-3735/21/11/003
Abstract
The authors describe a new technique, frequency-resolved capacitance spectroscopy (FRCS), for observing deep-level emission rates in semiconductor diodes and determining their activation energies. The technique uses a simple swept-frequency capacitance bridge with quadrature phase-sensitive detection.Keywords
This publication has 5 references indexed in Scilit:
- Photoconductivity measurements in a-Si:H by frequency-resolved spectroscopyJournal of Physics C: Solid State Physics, 1984
- Frequency-resolved spectroscopy and its application to the analysis of recombination in semiconductorsPhilosophical Magazine Part B, 1984
- A direct determination of the lifetime distribution of the 1.4 eV luminescence of a-Si:HJournal of Physics C: Solid State Physics, 1982
- Admittance spectroscopy of impurity levels in Schottky barriersJournal of Applied Physics, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974