Characterization of implantation and annealing of Zn-implanted InP by Raman spectrometry
- 15 September 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (6) , 1980-1984
- https://doi.org/10.1063/1.337199
Abstract
First- and second-order Raman scattering by Zn-implanted InP is investigated in order to determine critical fluences needed for a complete disturbance of the lattice and recovery temperature during thermal annealing. Disorder-activated first-order acoustical scattering and second-order optical scattering are shown to be highly sensitive probes.This publication has 15 references indexed in Scilit:
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