Computer simulation of channelling measurements on V3Si single crystals
- 1 January 1979
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 40 (1-2) , 97-104
- https://doi.org/10.1080/00337577908234500
Abstract
A computer program has been developed to simulate the channelling process of He-ions in V3Si with A15 crystal structure. The program considers the anisotropy of the thermal vibrations of the V-atoms and takes into account the interactions of an ton with all neighboured atoms in a plane. Angular scan curves through the [1001- and the 11101-channelling directions in the V- and the Si-sublattices are calculated with this computer program and found to be in good agreement with measured values. Calculated depth dependences of the critical angle and the minimum yield are in reasonable agreement with the measured results. Analytical treatments have also been applied but fail to describe the measured data.Keywords
This publication has 15 references indexed in Scilit:
- Radiation damage and superconductivity in V3Si single crystalsJournal of Nuclear Materials, 1978
- Channeling effect studies in V3 Si single crystalsNuclear Instruments and Methods, 1978
- Channeling inSi: Atomic Displacements and Electron-Phonon/Defect InteractionsPhysical Review Letters, 1977
- Channelling effect measurements of 4He-induced damage in V3Si single crystalsSolid State Communications, 1977
- The electron distribution in superconducting alloys: I. Analysis of V3Si at room temperatureSolid State Communications, 1976
- Superconductivity with onset above 23° K in NbGe sputtered filmsSolid State Communications, 1974
- Channeling of Protons in Thin BaTiCrystals at Temperatures above and below the Ferroelectric Curie PointPhysical Review B, 1972
- Monte Carlo Channeling CalculationsPhysical Review B, 1971
- Computer studies of fast ion trajectories in crystalsCanadian Journal of Physics, 1968
- Higher order momentum approximations in classical collision theoryThe European Physical Journal A, 1963