Electronic structure of [110] Si-Ge thin-layer superlattices
- 12 June 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (24) , 2435-2437
- https://doi.org/10.1063/1.101100
Abstract
First-principles electronic structure calculations for SinGen superlattices ( for n=4, 6, and 8) grown epitaxially on a (110) Si substrate reveal a nearly direct band gap (to within ≊0.04 eV for n=4) despite the pronounced indirectness of its constituents. This is unlike superlattices grown in the [001] direction which are indirect when grown on Si and quasi-direct only on substrates with larger lattice constants, e.g., Ge. Transition dipole matrix elements for the lowest energy direct transition vanish for all repeat periods n but are finite for several other new low-energy transitions.Keywords
This publication has 10 references indexed in Scilit:
- Silicon/germanium strained layer superlatticesJournal of Crystal Growth, 1989
- Origin of the optical transitions in ordered Si/Ge(001) superlatticesPhysical Review B, 1988
- Electronic Structure and Optical Properties of Si-Ge SuperlatticesPhysical Review Letters, 1988
- Structural and electronic properties of epitaxial thin-layersuperlatticesPhysical Review B, 1988
- Theory of optical transitions in Si/Ge(001) strained-layer superlatticesPhysical Review B, 1987
- New optical transitions in strained Si-Ge superlatticesPhysical Review B, 1987
- New optical transitions in Si-Ge strained superlatticesPhysical Review Letters, 1987
- Indirect, quasidirect, and direct optical transitions in the pseudomorphic (44)-monolayer Si-Ge strained-layer superlattice on Si(001)Physical Review B, 1987
- Structurally induced optical transitions in Ge-Si superlatticesPhysical Review Letters, 1987
- Piezo-Electroreflectance in Ge, GaAs, and SiPhysical Review B, 1968