Recombination activity of iron related complexes in silicon
- 1 July 1995
- journal article
- Published by SAGE Publications in Materials Science and Technology
- Vol. 11 (7) , 670-675
- https://doi.org/10.1179/026708395790165318
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Injection-level-dependent recombination velocities at the Si-SiO2 interface for various dopant concentrationsJournal of Applied Physics, 1994
- Iron detection in the part per quadrillion range in silicon using surface photovoltage and photodissociation of iron-boron pairsApplied Physics Letters, 1993
- Monitoring of Heavy Metal Contamination during Chemical Cleaning with Surface PhotovoltageJournal of the Electrochemical Society, 1993
- The Reaction Kinetics of Iron‐Boron Pair Formation and Dissociation in P‐Type SiliconJournal of the Electrochemical Society, 1993
- Temperature dependence of minority-carrier lifetime in iron-diffused p-type silicon wafersJournal of Applied Physics, 1991
- A fast, preparation-free method to detect iron in siliconJournal of Applied Physics, 1990
- Mechanism of internal gettering of interstitial impurities in Czochralski-grown siliconPhysical Review Letters, 1990
- Iron and the iron-boron complex in siliconJournal of Applied Physics, 1985
- The Properties of Iron in SiliconJournal of the Electrochemical Society, 1981
- The solution of iron in siliconJournal of Applied Physics, 1980