Mechanism of internal gettering of interstitial impurities in Czochralski-grown silicon
- 8 January 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (2) , 196-199
- https://doi.org/10.1103/physrevlett.64.196
Abstract
Results of the low-temperature precipitation of interstitial Fe (≊250 °C) in Czochralski-grown Si after different annealing treatments for the precipitation of oxygen are presented. It is concluded that the Fe solubility is not affected by the oxygen-precipitation process. The Fe-precipitation kinetics are found to be strongly accelerated by oxygen-precipitation–induced defects. Based on the results the mechanism of internal gettering is derived. For the first time the contribution of oxygen precipitates and dislocations to the internal-gettering process have been determined quantitatively.Keywords
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