Properties of a-SiN0.7:H Films in High Electric Field

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Abstract
To understand the mechanism of transport in a high electric field, various properties of a-SiN0.7:H films deposited by rf glow discharge were investigated. The results are explained by a model in which two kinds of centers with different barrier heights are subject to Poole-Frenkel ionization. Either one of these centers contributes to the current, depending on the temperature. Above room temperature, the center contributing to Poole-Frenkel current is the neutral Si dangling bond, where the Fermi level is located. Below room temperature, the center can be associated with the negatively charged Si dangling bond, which behaves as an electron trap for photoconductivity. Based on this understanding of energy levels subject to Poole-Frenkel ionization, field enhancement of the photocurrent was expected and actually observed for the first time.

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