Asymmetric Sb dimers on the 1 ML Ge-terminated Si(100) surface
- 10 September 1994
- journal article
- other
- Published by Elsevier in Surface Science
- Vol. 316 (3) , L1088-L1092
- https://doi.org/10.1016/0039-6028(94)91210-6
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Structure of Si(100)-(2×1) surface using UHV transmission electron diffractionPhysical Review Letters, 1993
- Direct measurement of the asymmetric dimer buckling of Ge on Si(001)Physical Review Letters, 1993
- Dimer formation in monolayer antimony films deposited at room temperature on Si(100)−2 × 1Surface Science, 1992
- Asymmetrical dimers on the Ge(001)-2 × 1-Sb surface observed using X-ray diffractionSurface Science, 1992
- Si(100) and Ge(100) core-level shifts: A reevaluationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2×1-SbPhysical Review Letters, 1990
- Influence of surfactants in Ge and Si epitaxy on Si(001)Physical Review B, 1990
- Symmetric arsenic dimers on the Si(100) surfacePhysical Review Letters, 1986
- Ion beam crystallography of silicon surfaces II. Si(100)-(2 × 1)Surface Science, 1983
- Theory of reconstruction induced subsurface strain — application to Si(100)Surface Science, 1978