The effect of annealing and hydrogenation on the dislocation conduction in silicon
- 16 February 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 87 (2) , 657-665
- https://doi.org/10.1002/pssa.2210870230
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Investigation of the energy spectrum and kinetic phenomena in dislocated Si crystals (I)Physica Status Solidi (a), 1977
- Realistic tight-binding model for chemisorption: H on Si and Ge (111)Physical Review B, 1976