Microalloy transistor
- 1 April 1958
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Electron Devices
- Vol. 5 (2) , 49-54
- https://doi.org/10.1109/t-ed.1958.14331
Abstract
The microalloy transistor is fabricated by jet electrochemical techniques. It differs from the surface-barrier transistor (sbt) in that extremely shallow alloy contacts replace the surface-barrier contacts. The microalloy contacts are accomplished in a few seconds at a low alloy temperature by a fabrication technique which is described herein. The high-injection efficiency of the resulting contact makes possible increased efficiency of high-frequency transistors. This paper reviews the microalloying process in its application to both homogeneous and graded-base transistors and analyzes mathematically the microalloy emitter region.Keywords
This publication has 5 references indexed in Scilit:
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