Deposition of silicon from SiCl4 in an inductive r.f. low pressure plasma
- 1 April 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 90 (3) , 237-241
- https://doi.org/10.1016/0040-6090(82)90368-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Retention and endurance characteristics of HCl-annealed and unannealed MNOS capacitorsSolid-State Electronics, 1979
- Optical and photoconductive properties of discharge-produced amorphous siliconJournal of Applied Physics, 1977
- Amorphous silicon solar cellApplied Physics Letters, 1976
- Chemical Processes in Vapor Deposition of Silicon: II . Deposition from andJournal of the Electrochemical Society, 1975